Active and preferred
RoHS Compliant
Lead-free

S25FL256SAGBHB213

Data Sheet
package
software

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S25FL256SAGBHB213
S25FL256SAGBHB213
Data Sheet

Product details

  • Classification
    ISO 26262-ready
  • Density
    256 MBit
  • Family
    FL-S
  • Interface Bandwidth
    66 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 105 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Automotive
Recommended
OPN
S25FL256SAGBHB213
Product Status active and preferred
Infineon Package
PG-TFBGA-24
Package Name FBGA-24 (002-15534)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TFBGA-24
Package Name FBGA-24 (002-15534)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S25FL256SAGBHB213 is a 256 Mb (32 MB) automotive-grade, AEC-Q100 qualified serial NOR flash memory using 65-nm MIRRORBIT™ technology and Eclipse architecture. It supports SPI Multi-I/O with single, dual, and quad data lines, operates at up to 133 MHz SDR or 80 MHz DDR, and achieves up to 80 MBps read rates. Hybrid sector architecture, advanced security, and wide voltage range enable reliable code storage and XIP in automotive and industrial applications.

Features

  • MIRRORBIT™ technology stores 2 bits per cell
  • Eclipse architecture for fast program/erase
  • SPI Multi-I/O: x1, x2, x4 data width support
  • DDR read commands for higher throughput
  • 256B/512B page programming buffer
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20-year data retention minimum
  • 1024-byte One-Time Programmable (OTP) area
  • Advanced sector protection (ASP)
  • Core voltage: 2.7 V to 3.6 V, I/O: 1.65 V to
  • Operating temp: –40°C to +125°C

Benefits

  • High density, low-cost storage solution
  • Fast read/write boosts system performance
  • Flexible interface fits many host controllers
  • DDR/QIO enables high-speed data access
  • Large buffer improves programming efficiency
  • Multiple erase options ease migration
  • Reliable for frequent updates and code
  • Long retention ensures data integrity
  • OTP secures device identity and config
  • Sector protection prevents unwanted changes
  • Wide voltage range supports diverse systems
  • Broad temp range fits harsh environments

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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