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RoHS Compliant

S25FL127SABNFM701

Data Sheet
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S25FL127SABNFM701
S25FL127SABNFM701
Data Sheet

Product details

  • Density
    128 MBit
  • Family
    FL-S
  • Interface Bandwidth
    54 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    108 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Qualification
    Automotive
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The S25FL127SABNFM701 is a 128 Mb (16 MB) SPI NOR flash memory using 65-nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. It supports Single, Dual, and Quad SPI I/O with read speeds up to 54 MBps, operates from 2.7 V to 3.6 V, and withstands -40°C to 125°C (AEC-Q100 Grade 1).

Features

  • CMOS 3.0 V core
  • 128 Mb (16 MB) density
  • SPI with multi-I/O support
  • 24- or 32-bit address options
  • Read commands: Normal, Fast, Dual, Quad
  • AutoBoot for automatic read on power-up/reset
  • 256- or 512-byte page programming buffer
  • Internal ECC with single bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector
  • 20 year data retention
  • 1024-byte one-time programmable (OTP) array

Benefits

  • Low voltage operation reduces power use
  • High density enables large code/data storage
  • Flexible SPI I/O boosts system compatibility
  • Extended addressing supports large designs
  • Multiple read modes optimize speed
  • AutoBoot accelerates system startup
  • Large buffers speed up programming
  • ECC improves data reliability
  • Flexible erase options fit various needs
  • High endurance lowers maintenance cost
  • Long retention ensures data safety
  • OTP region adds secure storage

Applications

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Documents

Design resources

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Developer community

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