Active and preferred
RoHS Compliant
Lead-free

S25FL064LABMFB003

Data Sheet
package
software

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S25FL064LABMFB003
S25FL064LABMFB003
Data Sheet

Product details

  • Density
    64 MBit
  • Family
    FL-L
  • Interface Bandwidth
    54 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    108 / 54
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 105 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2032
  • Qualification
    Automotive
Recommended
OPN
S25FL064LABMFB003
Product Status active and preferred
Infineon Package
PG-DSO-16
Package Name SOIC-16 (002-15547)
Packing Size 1450
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-16
Package Name SOIC-16 (002-15547)
Packing Size 1450
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S25FL064LABMFB003 is a 64 Mb (8 MB) automotive-grade SPI NOR flash memory with a 3.0 V supply, 65-nm floating gate technology, and support for single, dual, and quad SPI up to 108 MHz SDR and 54 MHz DDR. It achieves up to 54 MBps read speed, offers password-protected security regions, and supports 100,000 program-erase cycles with 20-year retention. Operating from -40°C to +125°C (AEC-Q100 Grade 1), it is ideal for demanding automotive and industrial applications.

Features

  • SPI interface with single, dual, quad I/O
  • Supports DDR and QPI modes
  • 256-byte page programming buffer
  • Uniform 4 KB, 32 KB, 64 KB, and chip erase
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • Security regions with individual lock bits
  • Deep Power Down mode for data protection
  • 2.7 V to 3.6 V supply voltage
  • Input signal overshoot tolerance ±1.0 V

Benefits

  • Flexible I/O options enable fast data
  • DDR/QPI boost read and write speeds
  • Large buffer allows efficient programming
  • Multiple erase sizes fit varied applications
  • High endurance for long-term reliability
  • Data remains safe for up to 20 years
  • Security regions prevent unauthorized access
  • Deep Power Down blocks unwanted writes
  • Operates in standard 3 V systems
  • Handles transient voltage spikes safely

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }