Active and preferred

JANSR2N7660U3CE

Data Sheet
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JANSR2N7660U3CE
JANSR2N7660U3CE
Data Sheet

Product details

  • Die Size
    3
  • ESD Class
    2
  • Generation
    R9
  • ID (@25°C) max
    -24 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5e Ceramic Lid
  • Polarity
    P
  • Product Category
    Rad hard MOSFETS
  • QG
    50 nC
  • QPL Part Number
    2N7660U3CE
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    72 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    -100 V
  • VF max
    -1.3 V
  • Voltage Class max
    -100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name Enhanced SMD0.5
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free Yes
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name Enhanced SMD0.5
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
JANSR2N7660U3CE P-channel MOSFET is rad hard, with -100V and -24A, in a single SMD-0.5e Ceramic Lid package. It is QPL classified and has electrical performance up to 100krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

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