JANSR2N7598U3CE
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JANSR2N7598U3CE

Rad hard, 600 V, 3.5 A, N-channel MOSFET, R6 in SMD-0.5e Ceramic Lid package - 100 krad(Si) TID, DLA
Data Sheet
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JANSR2N7598U3CE
JANSR2N7598U3CE
Data Sheet

Product details

  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@25°C) max
    3.4 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5e
  • Polarity
    N
  • QG
    52 nC
  • QPL Part Number
    2N7598U3CE
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    3.1 Ω
  • SEE
    3 MeV∙cm2/mg
  • TID max
    100 Krad(Si)
  • VBRDSS
    600 V
  • VF max
    1.2 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
JANSR2N7598U3CE N-channel MOSFET is rad hard, with 600 V and 3.4 A, in a single SMD-0.5e Ceramic Lid package. It is QPL classified and has electrical performance up to 100 krad(Si) TID. IR HiRel R6 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

Features

  • Hermetically sealed
  • Low RDS(on)
  • Single event effect hardened
  • Low total gate charge
  • Simple drive requirements
  • Enhanced ceramic package
  • Light weight
  • ESD rating: Class 2 (MIL-STD-750, 1020)
Documents

Design resources

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