JANSF2N7661U3CE
coming soon
coming soon

JANSF2N7661U3CE

Rad hard, -200 V, -15 A, MOSFET in SMD-0.5e Ceramic Lid package – 300 krad TID, JANS

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

JANSF2N7661U3CE
JANSF2N7661U3CE


Product details

  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R9
  • ID (@25°C) max
    -15 A
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-0.5e
  • Polarity
    P
  • QG
    49 nC
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    0.175 Ω
  • TID max
    300 Krad(Si)
  • VBRDSS
    -200 V
  • VF max
    -1.3 V

OPN
Product Status coming soon
Infineon Package
Package Name Enhanced SMD0.5
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free Yes
RoHS Compliant No

Product Status coming soon
Infineon Package
Package Name Enhanced SMD0.5
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
JANSR2N7661U3CE P-channel MOSFET is rad hard, with -200V and -15A, in a single SMD-0.5e enhanced package with a ceramic lid and electrical performance up to 100krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

Features

  • SEE hardened
  • Low RDS(on)
  • Rugged SOA
  • Improved Avalanche Energy
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Light weight
  • Surface mount
Documents

Design resources

Developer community