Active and preferred

JANSF2N7660T3

Data Sheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

JANSF2N7660T3
JANSF2N7660T3
Data Sheet

Product details

  • Die Size
    3
  • ESD Class
    2
  • Generation
    R9
  • ID (@25°C) max
    -23 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Low-Ohmic
  • Polarity
    P
  • QG
    50 nC
  • QPL Part Number
    2N7660T3
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    76 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    -100 V
  • VF max
    -1.3 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
JANSF2N7660T3 is a rad hard, single P-channel MOSFET in a TO-257AA Tabless low ohmic package. With -100V and -23A capabilities, this R9 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }