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JANSF2N7380

Data Sheet
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JANSF2N7380
JANSF2N7380
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1C
  • Generation
    R4
  • ID (@100°C) max
    9.1 A
  • ID (@25°C) max
    14.4 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    TO-257AA
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    40 nC
  • QPL Part Number
    2N7380
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    180 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.8 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name TO-257AA STANDARD
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO257-3
Package Name TO-257AA STANDARD
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The N-channel MOSFET JANSF2N7380 is a single, rad hard device with a maximum voltage of 100V and current of 14.4A. It is designed for use in space applications, with electrical performance up to 300krad(Si) TID and is QPL-qualified. The IR HiRel rad hard HEXFET technology used in the MOSFET provides high performance and reliability, making it ideal for use in DC-DC converters and motor control.

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