ISZ0803NLS

OptiMOS™ low-voltage power MOSFET - perfectly addressing the needs of charger and adapter designs
Data Sheet

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ISZ0803NLS
ISZ0803NLS
Data Sheet

Product details

  • Budgetary Price €/1k
    0.36
  • ID (@25°C) max
    37 A
  • Operating Temperature range
    -55 °C to 150 °C
  • Package
    PQFN 3.3 x 3.3 Fused Lead
  • Polarity
    N
  • QG (typ @4.5V)
    6 nC
  • QG (typ @10V)
    11 nC
  • RDS (on) (@10V) max
    16.9 mΩ
  • RDS (on) (@4.5V) max
    21.9 mΩ
  • VDS max
    100 V
  • VGS(th) range
    1.1 V to 2.3 V
  • VGS(th)
    1.6 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications . ISZ0803NLS in the PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.

Features

  • Logic level availability
  • Low on-state resistance RDS(on)
  • Low gate, output and reverse recovery charge
  • Excellent thermal behavior
  • Available in 2 small standard packages

Benefits

  • Short lead times
  • Quick quote response
  • Highest efficiency and power density designs
  • Compact, lightweight and environmentally friendly products
  • Excellent price-performance ratio

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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