not for new design
RoHS Compliant

ISP25DP06LMS

P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications
Data Sheet
package
ea.
in stock

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ISP25DP06LMS
ISP25DP06LMS
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.13
  • ID (@25°C) max
    -1.9 A
  • IDpuls max
    -7.6 A
  • Mode
    Enhancement
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    SOT-223
  • Pin Count
    3 Pins
  • Polarity
    P
  • Ptot max
    5 W
  • QG (typ @10V)
    -13.9 nC
  • RDS (on) (@4.5V) max
    310 mΩ
  • RDS (on) (@10V) max
    250 mΩ
  • Special Features
    Small Power
  • VDS max
    -60 V
  • VGS(th)
    -1 V to -2 V
OPN
ISP25DP06LMSATMA1
Product Status not for new design
Infineon Package
PG-SOT223-3
Package Name SOT-223-3
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-SOT223-3
Package Name SOT-223-3
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications . The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications. Enabling fast switching, avalanche ruggedness and an easy interface to microcontroller unit (MCU), also featuring a very low on-resistance RDS(on). It is available in logic level.

Features

  • VDS= -60V
  • Very low on-resistance RDS(on)
  • 100% avalance tested
  • Logic level
  • Qualified according to JEDEC standard
0

Benefits

  • Easy interface to MCU
  • Fast switching
  • Avalanche ruggedness

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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