Active and preferred
RoHS Compliant

ISC031N08NM6SC

OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling
Data Sheet
package

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ISC031N08NM6SC
ISC031N08NM6SC
Data Sheet

Product details

  • ID (@25°C) max
    145 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6 DSC
  • Polarity
    N
  • QG (typ @10V)
    37 nC
  • RDS (on) (@10V) max
    3.1 mΩ
  • Special Features
    Dual-Side Cooling
  • VDS max
    80 V
  • VGS(th)
    3 V
Recommended
OPN
ISC031N08NM6SCATMA1
Product Status active and preferred
Infineon Package
PG-WSON-8
Package Name SuperSO8 5x6 DSC
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-WSON-8
Package Name SuperSO8 5x6 DSC
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower RDS(on) and ~40% improved FOMQg x RDS(on) in SuperSO8 DSC. The performance improvements lead to higher system efficiency and power density. Contact us for more information!

Features

  • High performance silicon technology
  • RDS(on) optimized for target application
  • Low top-side RthJC (0/72 K/W)
  • 175°C rated
  • Industrial qualification

Benefits

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Improved heat dissipation
  • Improved power, SOA avalanche current
  • Robust reliable performance
  • Drop-in replacement for SuperSO8

Documents

Documents

Design resources

Partner solutions

Developer community

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