Active and preferred
RoHS Compliant

ISC012N04LM6

OptiMOS™ 6 power MOSFET 40 V Logic Level in a SuperSO8 package
Data Sheet
package

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ISC012N04LM6
ISC012N04LM6
Data Sheet

Product details

  • Budgetary Price €/1k
    0.57
  • ID (@25°C) max
    238 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6
  • Polarity
    N
  • QG (typ @10V)
    51 nC
  • QG (typ @4.5V)
    25 nC
  • RDS (on) (@10V) max
    1.2 mΩ
  • RDS (on) (@4.5V) max
    1.7 mΩ
  • Special Features
    Fused leads
  • VDS max
    40 V
  • VGS(th)
    1.6 V
Recommended
OPN
ISC012N04LM6ATMA1
Product Status active and preferred
Infineon Package
PG-TDSON-8
Package Name SuperSO8 FL
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TDSON-8
Package Name SuperSO8 FL
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The ISC012N04LM6 OptiMOS™ 6 40V in logic level is setting new technology standards in discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits, optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits.

Features

  • Logic level gate drive capability
  • Low on-resistance RDS(on)
  • 175°C junction temperature rating
  • 100% Avalanche tested
  • Halogen-free according to IEC61249-2-21
  • Optimized for synchronous application

Benefits

  • Gate drive flexibility
  • Highest system efficiency
  • Increased operating margin
  • Robust, reliable performance
  • Environmentally friendly
  • Increased power density, low overshoot

Documents

Documents

Design resources

Partner solutions

Developer community

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