IRLH5036

60V Single N-Channel HEXFET Power MOSFET in a PQFN package
Data Sheet

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IRLH5036
IRLH5036
Data Sheet

Product details

  • ID (@ TC=100°C) max
    100 A
  • ID max
    100 A
  • ID (@ TC=25°C) max
    100 A
  • ID (@ TA=70°C) max
    16 A
  • ID (@ TA=25°C) max
    20 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    PQFN 5 x 6 B/G
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    3.6 W
  • Ptot max
    250 W
  • Qgd
    18 nC
  • QG
    44 nC
  • RDS (on) (@4.5V) max
    5.5 mΩ
  • RDS (on) (@10V) max
    4.4 mΩ
  • RDS (on) max
    4.4 mΩ
  • RthJC max
    0.5 K/W
  • Tj max
    150 °C
  • VDS max
    60 V
  • VGS max
    16 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • Low RDSon (less than 5.5mOhms @ Vgs = 4.5V) Lowers Conduction Losses
  • Low Thermal Resistance to PCB (less than 2.7°C/W) Enables better thermal dissipation
  • 100% Rg tested for Increased Reliability
  • Low Profile (less than 0.9 mm) results in Increased Power Density
  • Industry-Standard Pinout for Multi-Vendor Compatibility
  • Compatible with Existing Surface Mount Techniques for Easier Manufacturing
  • Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen
  • MSL1, Industrial Qualification results in Increased Reliability

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