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IRHYS67230CSCS

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IRHYS67230CSCS
IRHYS67230CSCS

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    10 A
  • ID (@25°C) max
    16 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    42 nC
  • QPL Part Number
    2N7592T3
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    130 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IRHYS67230CSCS R6 N-channel MOSFET is rad hard with 200V and 16A capacity. In a TO-257AA low ohmic package, it is designed for space applications. With improved immunity to Single Event Effect, it offers very low RDS(on) and faster switching times, increasing power density for DC-DC converters and motor controllers. Electrical performance is characterized up to 100krad(Si) TID.

Applications

Documents

Design resources

Developer community

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