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IRHYS67130CSCS

Data Sheet
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IRHYS67130CSCS
IRHYS67130CSCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    19 A
  • ID (@25°C) max
    20 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    50 nC
  • QPL Part Number
    2N7588T3
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    42 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHYS67130CSCS R6 N-channel MOSFET is a rad hard device with 100V and 20A ratings. It offers low power losses and high performance in switching applications. This MOSFET is ideal for use in space applications, with electrical performance up to 100krad(Si) TID, QIRL classification. Its low RDS(on) and low gate charge help reduce power losses in DC-DC converters and motor controllers.

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