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IRHYK57133CMSE

Data Sheet
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IRHYK57133CMSE
IRHYK57133CMSE
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1C
  • Generation
    R5
  • ID (@100°C) max
    12.5 A
  • ID (@25°C) max
    20 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100
  • Package
    TO-257AA
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    48 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    82 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    130 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name TO-257 TABLESS LOW OHMIC LF
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO257-3
Package Name TO-257 TABLESS LOW OHMIC LF
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHYK57133CMSE R5 N-channel MOSFET is a rad hard device with 130V and 20A rating. Housed in a TO-257AA tabless low ohmic package, it has electrical performance up to 100krad(Si) TID. The low RDS(on) and gate charge reduce power losses in switching applications. It offers MOSFET advantages like voltage control, fast switching, and temperature stability. SEE characterized performance up to an LET of 80 MeV·cm2/mg.

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