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IRHYB9A3034CM

Data Sheet
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IRHYB9A3034CM
IRHYB9A3034CM
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R9
  • ID (@100°C) max
    28 A
  • ID (@25°C) max
    30 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Tabless Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    45 nC
  • QPL Part Number
    2N7647D5
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    19 mΩ
  • SEE
    Yes
  • TID max
    300 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
R9 N-channel MOSFET IRHYB9A3034CM is a rad hard device with low RDS(on) and fast switching times, ideal for space applications. Its superjunction technology reduces power losses and increase power density in high speed switching applications. It's rated up to 60V, 30A, and 300krad(Si) TID, with improved immunity to Single Event Effect. Its electrical performance is characterized for useful performance with LET up to 90MeV·cm2/mg.

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }