Active and preferred

IRHNS9A3160

Data Sheet
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IRHNS9A3160
IRHNS9A3160
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R9
  • ID (@100°C) max
    93 A
  • ID (@25°C) max
    100 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    300
  • Package
    SupIR-SMD
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    195 nC
  • QPL Part Number
    2N7653U2A
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    6.5 mΩ
  • SEE
    Yes
  • TID max
    300 Krad(Si)
  • VBRDSS
    100 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-SOG-3
Package Name SUPIR SMD
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-SOG-3
Package Name SUPIR SMD
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The N-channel MOSFET IRHNS9A3160 is rad hard and has a 100V rating and a 100A current capacity. It comes in a SupIR-SMD package and has electrical performance up to 300krad(Si) TID. A COTS device , IRHNS9A3160 offers low RDS(on) and faster switching times for high power density in DC-DC converters and motor controllers. A reliable choice for space applications.

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