Active and preferred

IRHNS7460SE

Data Sheet
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IRHNS7460SE
IRHNS7460SE
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R4
  • ID (@100°C) max
    12 A
  • ID (@25°C) max
    20 A
  • Optional TID Rating (kRad(si))
    100
  • Package
    SupIR-SMD
  • Polarity
    N
  • QG
    220 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    320 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    500 V
  • VF max
    1.8 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-SOG-3
Package Name SUPIR SMD
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-SOG-3
Package Name SUPIR SMD
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The IRHNS7460SE SupIR-SMD N-channel MOSFET is a rad hard, 500V, 12A device for space applications. Its IR HiRel rad hard HEXFET technology provides high performance and reliability in satellite applications, with low RDS(on) and low gate charge for reduced power losses. Characterized for both Total Dose and Single Event Effects (SEE), this COTS device, IRHNS7460SE offers electrical performance up to 100krad(Si) TID.

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