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IRHNPC9A3014

Data Sheet
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IRHNPC9A3014
IRHNPC9A3014
Data Sheet

Product details

  • Die Size
    1
  • ESD Class
    1B
  • Generation
    R9
  • ID (@25°C) max
    10 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.1
  • Polarity
    N
  • QG
    11 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    70 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNPC9A3014 R9 N-channel MOSFET is a rad hard, 60V, 10A MOSFET in a SMD-0.1 package. It has electrical performance up to 300krad(Si) TID and is COTS classified. This MOSFET provides superior power performance for space applications with improved immunity to SEE and LET up to 88.6 MeV·cm2/mg. Its low RDS(on) and fast switching times make it ideal for DC-DC converters or motor drives in power designs for satellite bus and payload systems.

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