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IRHNME9A7024

Rad hard, 60 V, 25 A, rad hard MOSFET in SMD-0.2e Ceramic Lid package – 100 krad TID, COTS
Data Sheet

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IRHNME9A7024
IRHNME9A7024
Data Sheet

Product details

  • Die Size
    1
  • ESD Class
    Class 1C
  • Generation
    R9
  • ID (@25°C) max
    25 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2e
  • Polarity
    N
  • QG
    31 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    30 Ω
  • TID max
    100 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNME9A7024 is a R9 generation, rad hard, single N-channel MOSFET in a SMD-0.2e package with a ceramic lid that can handle 60V and 25A. It is optimal for space applications as its combination of low RDS(on) and fast switching times will allow for better performance in applications such as DC-DC converter or motor drives. This device retains all of the well established advantages of MOSFETs such as voltage control and fast switching.

Features

  • SEE hardened up to LET = 90 MeV.cm2/mg
  • Low RDS(on)
  • Low total gate charge
  • Fast switching
  • Hermetically sealed ceramic package
  • Surface mount
  • Light weight
  • ESD rating: class 1C per MIL-STD-750, Method 1020

Documents

Documents

Design resources

Partner solutions

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