not for new design

IRHNMC9A3120

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
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IRHNMC9A3120
IRHNMC9A3120
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1.7
  • ESD Class
    Class 1C
  • Generation
    R9
  • ID (@100°C) max
    14 A
  • ID (@25°C) max
    23 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2C
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    23 nC
  • QPL Part Number
    2N7651U8C
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    55 mΩ
  • SEE
    Yes
  • TID max
    300 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Ceramic Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Ceramic Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
Rad hard R9 N-channel MOSFET IRHNMC9A3120 is a 100V and 23A device packaged in a ceramic SMD-0.2. Capable of withstanding up to 300krad(Si) TID, these COTS MOSFETs feature improved immunity to Single Event Effects (SEE) and are ideal for space applications. Their low RDS(on) and fast switching times make them perfect for DC-DC converters and motor drives.

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