not for new design

IRHNM9A3120

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
package

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IRHNM9A3120
IRHNM9A3120
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1.7
  • ESD Class
    Class 1C
  • Generation
    R9
  • ID (@100°C) max
    14 A
  • ID (@25°C) max
    23 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    23 nC
  • QPL Part Number
    2N7651U8
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    55 mΩ
  • SEE
    Yes
  • TID max
    300 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Metal Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Metal Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHNM9A3120 is a rad hard R9 N-channel MOSFET in a SMD-0.2 package. With a voltage rating of 100V and a current rating of 23A, this single MOSFET is ideal for space applications. This COTS part has electrical performance up to 300krad(TID) and its low RDS(on) and fast switching times make it perfect for DC-DC converters and motor control. It retains all the benefits of MOSFETs while having improved SEE immunity.

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