Active and preferred

IRHNJC9A3130

Data Sheet
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IRHNJC9A3130
IRHNJC9A3130
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R9
  • ID (@100°C) max
    22 A
  • ID (@25°C) max
    35 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5C
  • Polarity
    N
  • QG
    48 nC
  • QPL Part Number
    2N7648U3C
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    34 mΩ
  • SEE
    Yes
  • TID max
    300 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-0.5 Ceramic Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-0.5 Ceramic Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The rad hard N-channel MOSFET IRHNJC9A3130 is a single device with 100V, 22A capabilities, packaged in R9 SMD-0.5 (ceramic lid) and rated for up to 300krad(Si) TID. Its low RDS(on) and faster switching times reduce power losses, increase power density and provide improved immunity to Single Event Effects (SEE) in high-speed switching applications. A COTS part, R9 MOSFETs are ideal for space applications.

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }