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IRHNJC67230

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IRHNJC67230
IRHNJC67230
Data Sheet

Product details

  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@25°C) max
    16 A
  • Optional TID Rating
    100 300
  • Package
    SMD-0.5C
  • Polarity
    N
  • QG
    50 nC
  • RDS (on) (@25°C) max
    130 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
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Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNJC67230 N-channel MOSFET is a rad hard, 200V, 16A single device with low RDS(on) and low gate charge, housed in a SMD-0.5 package with ceramic lid. This R6 COTS MOSFET has electrical performance up to 300krad(Si) TID. Ideal for space applications, it offers fast switching, voltage control, and high reliability in satellite bus and payload power systems.

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