IRHNJC67230
Active and preferred

IRHNJC67230

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IRHNJC67230
IRHNJC67230


Product details

  • Die Size
    3
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@25°C) max
    16 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5C
  • Polarity
    N
  • QG
    50 nC
  • QPL Part Number
    2N7591U3C
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    130 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V

OPN
Product Status active and preferred
Infineon Package
Package Name SMD-0.5 Ceramic Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No

Product Status
Active
Infineon Package
Package Name SMD-0.5 Ceramic Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHNJC67230 N-channel MOSFET is a rad hard, 200V, 16A single device with low RDS(on) and low gate charge, housed in a SMD-0.5 package with ceramic lid. This R6 COTS MOSFET has electrical performance up to 300krad(Si) TID. Ideal for space applications, it offers fast switching, voltage control, and high reliability in satellite bus and payload power systems.

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Design resources

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