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IRHNJ9230

Data Sheet
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IRHNJ9230
IRHNJ9230
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1B
  • Generation
    R4
  • ID (@100°C) max
    -4.1 A
  • ID (@25°C) max
    -6.5 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5
  • Polarity
    P
  • QG
    45 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    800 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    -200 V
  • VF max
    -5 V
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Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNJ9230 is a R4, rad hard, -200V, -6.5A, single, P-channel MOSFET in a SMD-0.5 package. It has electrical performance up to 100krad(Si) TID and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.

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