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IRHNJ7430SESCS

Data Sheet
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IRHNJ7430SESCS
IRHNJ7430SESCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1C
  • Generation
    R4
  • ID (@100°C) max
    2.8 A
  • ID (@25°C) max
    4.5 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-0.5
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    30 nC
  • QPL Part Number
    2N7466U3
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    1600 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    500 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-0.5 Metal Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-0.5 Metal Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The IRHNJ7430SESCS N-channel MOSFET has rad hard technology with electrical performance up to 100krad(Si) TID, and is a single 500V, 4.5A device in a SMD-0.5 package. With IR HiRel rad hard HEXFET technology, this R4 MOSFET is ideal for space applications, with low RDS(on) and gate charge, and fast switching.

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