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IRHNJ67C30

Data Sheet
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IRHNJ67C30
IRHNJ67C30
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    2.2 A
  • ID (@25°C) max
    3.4 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    52 nC
  • QPL Part Number
    2N7598U3
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    2900 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    600 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-0.5 Metal Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-0.5 Metal Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The rad hard N-channel MOSFET IRHNJ67C30 is a high-performance power MOSFET for space applications. With 600V and 3.4A, this R6 single MOSFET is packaged in a SMD-0.5 and can withstand up to 100krad(Si) TID radiation. Its very low RDS(on) and faster switching times reduce power loss and increase power density, making it ideal for high-speed switching applications such as DC-DC converters and motor controllers.

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