Active and preferred

IRHNJ67134

Data Sheet
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IRHNJ67134
IRHNJ67134
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    12 A
  • ID (@25°C) max
    19 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    50 nC
  • QPL Part Number
    2N7589U3
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    88 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    150 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-0.5 Metal Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-0.5 Metal Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
This R6 MOSFET is a rad hard, high-performance device in a SMD-0.5 package. With a 150V, 19A capacity and improved immunity to SEE and LET up to 90MeV·cm2/mg, IRHNJ67134 offers electrical performance up to 100krad(Si) TID and is COTS rated with lead attached and formed. Ideal for high-speed switching in space applications, it has low RDS(on) and faster switching times, reducing power loss and increasing power density.

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