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IRHNJ63C30SCS

Data Sheet
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IRHNJ63C30SCS
IRHNJ63C30SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    2.2 A
  • ID (@25°C) max
    3.4 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    52 nC
  • QPL Part Number
    2N7598U3
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    2900 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    600 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNJ63C30SCS R6 MOSFET is a rad hard, single N-channel device with a 600V and 3.4A capacity, packaged in a SMD-0.5 package. It offers electrical performance up to 300krad(Si) TID and is QIRL space-qualified. Its very low RDS(on) and faster switching times make it ideal for high-speed switching applications, while retaining MOSFET advantages such as voltage control and temperature stability.

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