Active and preferred

IRHNJ63234

Data Sheet
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IRHNJ63234
IRHNJ63234
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    7.8 A
  • ID (@25°C) max
    12.4 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    50 nC
  • QPL Part Number
    2N7593U3
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    210 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-0.5 Metal Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-0.5 Metal Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The rad hard N-channel R6 MOSFET in a SMD-0.5 package is designed for space applications with improved immunity to Single Event Effects (SEE). With 250V, 12.4A current capacity, and up to 300krad(Si) TID electrical performance, IRHNJ63234 is ideal for space applications. Its combination of low RDS(on) and faster switching times reduces power loss and increases power density in high-speed applications.

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