Active and preferred

IRHNJ57Z30A

Data Sheet
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IRHNJ57Z30A
IRHNJ57Z30A
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1C
  • Generation
    R5
  • ID (@100°C) max
    22 A
  • ID (@25°C) max
    22 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    SMD-0.5
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    65 nC
  • QPL Part Number
    2N7479U3
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    20 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    30 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-0.5 Straight LA, Au lead
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-0.5 Straight LA, Au lead
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
Rad hard N-channel MOSFET IRHNJ57Z30A is a single device with a maximum voltage of 100V and current of 22A, designed for space applications. Its low RDS(on) and gate charge reduce power losses in DC-DC converters and motor control applications. With electrical performance up to 100krad(Si) TID, this R5 MOSFET is ideal for harsh radiation environments. Comes in a compact SMD-0.5 package.

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