Active and preferred

IRHNA7360SESCS

Data Sheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRHNA7360SESCS
IRHNA7360SESCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R4
  • ID (@100°C) max
    15 A
  • ID (@25°C) max
    24 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    250 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    200 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    400 V
  • VF max
    1.4 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-2 standard
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-2 standard
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
This N-channel MOSFET is a single, rad hard, 400V, 15A device with electrical performance up to 100krad(Si) TID. IRHNA7360SESCS comes in a SMD-2 package and uses R4 HEXFET technology, making it well suited for space applications needing high-performance power. Its low RDS(on) and gate charge reduces power losses in switching applications, such as DC-DC converters and motor control. Its QIRL screening level ensures quality and reliability.

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }