Active and preferred

IRHNA53160

Data Sheet
package

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IRHNA53160
IRHNA53160
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R5
  • ID (@100°C) max
    69 A
  • ID (@25°C) max
    75 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    SMD-2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    160 nC
  • QPL Part Number
    2N7469U2
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    12 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-2 standard
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-2 standard
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHNA53160 R5 rad hard N-channel MOSFET, in the SMD-2 package, is a high performance power MOSFET for space applications. With 100V voltage rating and 69A current handling capacity, this MOSFET has low RDS(on) and low gate charge, reducing power losses in DC-DC converters and motor control applications. It delivers electrical performance up to 300krad(Si) TID and is COTS rated for reliable performance in space missions.

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