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IRHN7450SESCS

Data Sheet
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IRHN7450SESCS
IRHN7450SESCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    5
  • ESD Class
    Class 3A
  • Generation
    R4
  • ID (@100°C) max
    7 A
  • ID (@25°C) max
    12 A
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-1
  • Polarity
    N
  • QG
    150 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    510 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    500 V
  • VF max
    1.6 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHN7450SESCS R4 MOSFET is a single radiation-hardened N-channel device in a SMD-1 package, with 500V, 12A ratings. It is ideal for space applications, with electrical performance up to 100krad(Si) TID and QIRL classification. These devices have low RDS(on) and gate charge, reducing power loss in DC-DC converters and motor control. They offer voltage control, fast switching, and temperature stability of electrical parameters.

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