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IRHN7250SESCS

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IRHN7250SESCS
IRHN7250SESCS

Product details

  • Configuration
    Discrete
  • Die Size
    5
  • ESD Class
    Class 3A
  • Generation
    R4
  • ID (@100°C) max
    16 A
  • ID (@25°C) max
    26 A
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-1
  • Polarity
    N
  • QG
    170 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    100 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.9 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHN7250SESCS R4 rad hard N-channel MOSFET, in the SMD-1 package, offers a high-performance solution for space applications. With a voltage rating of 200V and current handling capability of 26A, this MOSFET provides low RDS(on) and low gate charge for minimal power losses in DC-DC converters and motor control applications. It has electrical performance up to 100krad(Si) TID and is QIRL classified, ensuring reliable performance.

Applications

Documents

Design resources

Developer community

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