Active and preferred

IRHMS9A93260

Data Sheet
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IRHMS9A93260
IRHMS9A93260
Data Sheet

Product details

  • Die Size
    6
  • ESD Class
    3B
  • Generation
    R9
  • ID (@25°C) max
    -45 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    Low-Ohmic TO-254AA
  • Polarity
    P
  • QG
    230 nC
  • QPL Part Number
    2N7666T1
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    34 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    -200 V
  • VF max
    -1.3 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO254-3
Package Name TO-254AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO254-3
Package Name TO-254AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHMS9A93260 P-channel MOSFET is rad hard, with -200V and -45A, in a single TO-254AA Low-Ohmic package with electrical performance up to 300krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

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