Active and preferred

IRHMS9A3264

Data Sheet
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IRHMS9A3264
IRHMS9A3264
Data Sheet

Product details

  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R9
  • ID (@100°C) max
    45 A
  • ID (@25°C) max
    45 A
  • Optional TID Rating (kRad(si))
    300
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • QG
    165 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    19.5 mΩ
  • SEE
    Yes
  • TID max
    300 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO254-3
Package Name TO-254AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO254-3
Package Name TO-254AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHMS9A3264 is a rad hard R9 N-channel MOSFET with improved immunity to SEE and electrical performance up to 300krad(Si) TID. Its low RDS(on) and fast switching times increase power density and reduce power losses in high-speed switching applications in space satellite bus and payload power systems. Coming in a TO-254AA Low Ohmic package, established advantages include voltage control, fast switching, and electrical parameter stability.

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