Active and preferred

IRHMS9A3064

Data Sheet
package

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IRHMS9A3064
IRHMS9A3064
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R9
  • ID (@100°C) max
    45 A
  • ID (@25°C) max
    45 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • QG
    194 nC
  • QPL Part Number
    2N7652T1
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    7 mΩ
  • SEE
    Yes
  • TID max
    300 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO254-3
Package Name TO-254AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO254-3
Package Name TO-254AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHMS9A3064 R9 N-channel MOSFET is a rad hard device with a 60V, 45A rating for space applications. It features low RDS(on), faster switching, and improved immunity to SEE. Its electrical performance is characterized up to 300krad(Si) TID and LET up to 90MeV·cm2/mg. This COTS device comes TO-254AA low ohmic package with lead form down.

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