IRHMS67260SCS

Data Sheet

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IRHMS67260SCS
IRHMS67260SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    35 A
  • ID (@25°C) max
    45 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    240 nC
  • QPL Part Number
    2N7584T1
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    29 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS min
    200 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHMS67260SCS R6 N-channel MOSFET is a radiation-hardened MOSFET with a max voltage of 200V and max current of 45A. Its low RDS(on) and low gate charge make it perfect for switching applications. This MOSFET is ideal for space applications and has been characterized for both Total Dose and Single Event Effects (SEE) with useful performance up to LET of 90 MeV·cm2/mg.

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