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IRHMS57160SCSA

Data Sheet
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IRHMS57160SCSA
IRHMS57160SCSA
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R5
  • ID (@100°C) max
    45 A
  • ID (@25°C) max
    45 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    160 nC
  • QPL Part Number
    2N7471T1
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    13 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHMS57160SCSA R5 N-channel MOSFET is a space-grade device with rad hard design, 100V voltage rating, and 45A current rating. It comes in a TO-254AA low ohmic package with lead form down configuration. This MOSFET offers electrical performance up to 100krad(Si) TID classification. Its low RDS(on) and gate charge help reduce power losses in switching applications, while retaining all the inherent benefits of MOSFETs.

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