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IRHM7250SESCS

Data Sheet
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IRHM7250SESCS
IRHM7250SESCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    5
  • ESD Class
    Class 3A
  • Generation
    R4
  • ID (@100°C) max
    16 A
  • ID (@25°C) max
    26 A
  • Optional TID Rating (kRad(si))
    100
  • Package
    TO-254AA
  • Polarity
    N
  • QG
    180 nC
  • RDS (on) (@25°C) max
    100 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.9 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
This N-channel MOSFET, IRHM7250SESCS, is a single, high performance power device designed for space applications. With a voltage rating of 200V, it features low RDS(on) and low gate charge, making it ideal for DC-DC converters and motor control. The device is rad hard and has been characterized for Total Dose and Single Event Effects (SEE), with electrical performance up to 100krad(Si) TID. This COTS part comes in a standard TO-254AA package.

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