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IRHLYS77034CM

Data Sheet
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IRHLYS77034CM
IRHLYS77034CM
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@100°C) max
    20 A
  • ID (@25°C) max
    20 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    34 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    45 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHLYS77034CM R7 MOSFET is a rad hard, TO-257AA low ohmic packaged device with a high rating of 60V, 20A, and electrical performance up to 100krad(Si) TID. With single event gate rupture and burnout immunity, it is ideal for interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. Suitable for current boost in low signal sources and voltage comparators.

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