not for new design

IRHLNM83Y20SCS

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
package

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IRHLNM83Y20SCS
IRHLNM83Y20SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1.7
  • ESD Class
    Class 1B
  • Generation
    R8
  • ID (@100°C) max
    17 A
  • ID (@25°C) max
    17 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    26 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    15 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    20 V
  • VF max
    1 V
  • Voltage Class
    100 V
OPN
Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Metal Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Metal Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHLNM83Y20SCS is a rad hard N-channel MOSFET in a SMD-0.2 package. With a maximum of 20V and 17A, it has a QIRL classification and electrical performance up to 300krad(Si) TID. The R8 device provides immunity to single event gate rupture and burnout while interfacing with CMOS and TTL control circuits. Ideal for micro-controllers and logic gates, it maintains acceptable operating limits over full temperature and post-radiation.

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