IRHLNM7S7110SCS

Data Sheet

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRHLNM7S7110SCS
IRHLNM7S7110SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@100°C) max
    4.1 A
  • ID (@25°C) max
    6.5 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    11 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    290 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.4 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHLNM7S7110SCS is a radiation-hardened, single R7 N-channel MOSFET with 250V, 6.5A capacity in SMD-0.2 package. Its electrical performance is up to 100krad(Si) TID, making it ideal for space applications. With single event gate rupture and burnout immunity, it's a reliable solution for interfacing CMOS and TTL control circuits with power devices. QIRL space-qualified, it's designed for radiation environments.

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }