not for new design

IRHLNM7S3214

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
package

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IRHLNM7S3214
IRHLNM7S3214
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@100°C) max
    2 A
  • ID (@25°C) max
    3.2 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • QG
    13 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    1100 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHLNM7S3214 R7 logic level power MOSFET is a rad hard, single N-channel MOSFET in a SMD-0.2 package that can handle 250V and 3.2A. It provides a simple solution for interfacing CMOS and TTL circuits to power devices in space and radiation environments. It maintains its threshold voltage within acceptable operating limits even after exposure to radiation up to 300krad(Si) TID, while staying immune to single event gate rupture and burnout.

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