not for new design

IRHLNM77110SCV

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
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IRHLNM77110SCV
IRHLNM77110SCV
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@100°C) max
    4.1 A
  • ID (@25°C) max
    6.5 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    11 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    290 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHLNM77110SCV R7 logic level power MOSFET is a QIRL-qualified, rad hard N-channel MOSFET that can handle up to 100V and 6.5A. It comes in a compact SMD-0.2 package and offers a solution for interfacing with CMOS and TTL control circuits in radiation environments. The device's threshold voltage remains within operating limits even after exposure to radiation up to 100krad(Si) TID, and provides immunity to single event gate rupture and burnout.

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