not for new design

IRHLNM77110

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
package

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IRHLNM77110
IRHLNM77110
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@100°C) max
    4.1 A
  • ID (@25°C) max
    6.5 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    11 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    290 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Metal Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Metal Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHLNM77110 R7 logic level power MOSFET is a rad hard, single N-channel MOSFET in a SMD-0.2 package. With a voltage rating of 100V and a current rating of 6.5A, it provides a simple solution for interfacing with CMOS and TTL control circuits. The device maintains its threshold voltage within operating limits even after exposure to radiation up to 100krad(Si) TID, while remaining immune to single event gate rupture and burnout.

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