Active and preferred

IRHF7110SCS

Data Sheet
package

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IRHF7110SCS
IRHF7110SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1A
  • Generation
    R4
  • ID (@100°C) max
    2.2 A
  • ID (@25°C) max
    3.5 A
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    TO-205AF
  • Polarity
    N
  • QG
    11 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    600 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.4 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO205-3
Package Name TO-205AF (TO-39)
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO205-3
Package Name TO-205AF (TO-39)
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHF7110SCS in R4 technology offers a high-performance, rad hard N-channel MOSFET in a TO-205AF package. With a 200V voltage rating and 3.5V gate threshold, this device is ideal for space applications, featuring low RDS(on) and gate charge for reduced power losses during switching. Its electrical performance is characterized up to 100krad(Si) TID and up to LET of 90MeV·cm2/mg, while retaining the advantages of MOSFETs.

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