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IRH9150SCV

Data Sheet
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IRH9150SCV
IRH9150SCV
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    5
  • ESD Class
    Class 2
  • Generation
    R4
  • ID (@100°C) max
    -14 A
  • ID (@25°C) max
    -22 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-204AE
  • Polarity
    P
  • QG
    200 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    75 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    -100 V
  • VF max
    -3 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRH9150SCV P-channel MOSFET is rad hard, with -100V and -22A, in a single TO-204AE package. It has electrical performance up to 100krad(Si) TID and QIRL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

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